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Crimes Of War Cd Key
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Main Soundtrack
Alternative releases
(Incomplete list)
The Movie was released on DVD and CD by Fox Video in August 2002.
The Movie was released by Weidenfeld & Nicolson in 2004.
References
External links
Category:2001 films
Category:German films
Category:Films directed by Rolf Schüttler
Category:Films set in Berlin
Category:Films shot in Berlin
Category:Films shot in Munich
Category:Films shot in Germany
Category:Films set in Germany
Category:Films set in the 1940s
Category:2000s historical films
Category:German historical films
Category:Films produced by Bernd Eichinger1. Field of the Invention
The invention relates generally to transistors, and more particularly to lateral transistors of reduced thermal budget.
2. Description of the Related Art
The vertical type MOS transistor is the conventional transistor type for integrated circuits. As such, lateral transistors, such as those used for radio frequency (RF) applications and electro-optic applications, are often placed on the same semiconductor substrate as the vertical type MOS transistor. FIG. 1 illustrates an example of a lateral transistor on a portion of the active area of a vertical MOS transistor.
Referring to FIG. 1, the vertical MOS transistor is formed on a semiconductor substrate 100. The active area 110 of the vertical MOS transistor is formed in the semiconductor substrate 100, and the gate dielectric 120 is formed over the active area 110. The drain and source regions 130 of the vertical MOS transistor are formed in the active area 110, and the drain and source areas are electrically connected to the drain and source regions 120, respectively, of the vertical MOS transistor by diffusion regions 140, referred to as diffusion strips. The drain and source regions 120 and the diffusion strips 140, are commonly known as the source and drain, respectively, of the lateral transistor.
A lateral transistor is formed on the active area 110 of the vertical MOS transistor by forming a channel region on the active area 110, and forming the lateral transistor on the channel region. The lateral transistor further includes an oxide spacer 160 on the sidewalls of the diffusion strips 140, and gate dielectric 120 on the sidewalls of the oxide spacer 160, thus leaving a gate dielect
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